Advanced optoelectronic Devices

Catalogue des cours de Télécom SudParis

Code

IGSE PHY 7503

Niveau

MSc

Graduate

PostGraduate

Semestre

Spring

Domaine

Physique

Programme

Master of Science

Langue

Anglais/English

Crédits ECTS

5

Heures programmées

45

Charge de travail

90

Coordonnateur(s)

Département

  • Electronique et Physique

Acquis d'apprentissage

Capacity to design an opto-electronic device and circuit
Capacity to perform measurement and set up a complex experiment

Contenu

Semiconductor lasers

• Double hetero junction (DH) semiconductor lasers
• Gain-guided and index-guided semiconductor lasers
• Quantum well lasers (density of states, gain in QWs)
• Distributed feedback (DFB) lasers (oscillation condition, gain coupled DFBs)
• Surface emitting lasers (oscillation condition of VCSELs, Bragg mirror, oscillation frequencies)
• Direct modulation of semiconductor lasers (high speed modulation, damping factor)
• Frequency chirp in current-modulated lasers
• Laser noise (in tensity noise, spectral linewidth)

Electro-optic and acousto-optic modulators

• Electrooptic effect: amplitude and phase modulators
• High frequency modulation (transit time limitation, travelling wave modulators)
• Acousto-optic modulators
• Applications

Electroabsorption modulators

• Optical absorption due to an electron-hole pair
• Franz-Keldysh effect
• Quantum confined Stark Effect (QCSE)
• Interband electroabsorption modulators
• Technology and performance
• Chirping characteristics

Photodetectors

• photodiodes p-n, pin and avalanche
• Intersubband quantum well photodiodes
• Photodetector noise, Detector response time.

Prérequis

Background in semiconductors.

Mots-clés

Optic, semi conductors,

Evaluation

Written exam (N1);

Fiche mise à jour le 13/07/2017